PRACtical: Subarray-Level Counter Update and Bank-Level Recovery Isolation for Efficient PRAC Rowhammer Mitigation

As DRAM density increases, Rowhammer becomes more severe due to heightened charge leakage, reducing the number of activations needed to induce bit flips. The DDR5 standard addresses this threat with in-DRAM per-row activation counters PRAC and the Alert Back-Off ABO signal to trigger mitigation...